onsemi NDS9952A

Name: onsemi NDS9952A
Brand: onsemi
SKU: NDS9952A

Trans Mosfet N/p-ch 30V 3.7A/2.9A 8-PIN SOIC N T/r

$ 0.475

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Verical		NDS9952A	1,236	656					0.527	0.470
Rochester Electronics	2	NDS9952A	1,864					0.508	0.422	0.376	1d
Win Source		WS-NDS9952A	2,905	185					0.241	0.209	12h
ICPartonline		NDS9952A	16,504			29.000	27.550	26.100	24.650	23.200	>1wk
Worldway Electronics		NDS9952A	26,671	7	Tape & Reel		0.078	0.076	0.072	0.072	11h

Inventory History

3 month trend: -6.11%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NDS9952A.

IHS

Datasheet11 pages4 years ago

Farnell

Upverter

Future Electronics

onsemi

Inventory History

3 month trend:

-6.11%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-01-01

Lifecycle StatusObsolete (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi NDS9952A provided by its distributors.

Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R

Verical

Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V

onsemi

Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C

Farnell

These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Fairchild Semiconductor