Infineon IRF9952PBF

Name: Infineon IRF9952PBF
Brand: Infineon
SKU: IRF9952PBF

Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC

$ 0.446

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF9952PBF	0	20	Bulk			0.467	0.446	0.446	18h
Farnell	IRF9952PBF	0	5			0.740*	0.425*	0.286*	0.275*	4h
Win Source	WS-IRF9952PBF	35,200	105					0.368	0.368	6h
Worldway Electronics	IRF9952PBF	12,247	7	Tube		0.132	0.128	0.121	0.121	5h
ZTZ Technology Limited	IRF9952PBF	42,488			0.293	0.270	0.246	0.199	0.199	7d

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF9952PBF.

IHS

Datasheet11 pages21 years ago

Datasheet10 pages20 years ago

element14 APAC

TME

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-12-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF9952PBF provided by its distributors.

Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC

Verical

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.5A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Cont Current Id N Channel 2:3.5A; Cont Current Id P Channel:2.3A; Current Id Max:3.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:100mohm; On State Resistance P Channel Max:250mohm; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation P Channel 2:2W; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:16A; Pulse Current Idm N Channel 2:16A; Pulse Current Idm P Channel:10A; Row Pitch:6.3mm; SMD Marking:F9952

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