Infineon IRF7105PBF

Name: Infineon IRF7105PBF
Brand: Infineon
SKU: IRF7105PBF

Transistor MOSFET N P Channel 25 Volt 3.5 Amp-2.3 Amp 8 Pin SOIC

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7105PBF	0	3800	Bulk					0.700	19h
Farnell	IRF7105PBF	0	1		0.838*	0.663*	0.387*	0.309*	0.302*	5h
Win Source	WS-IRF7105PBF	36,290	230					0.200	0.172	7h
Worldway Electronics	IRF7105PBF	9,528	7	Tube		0.064	0.062	0.059	0.059	6h
ICPartonline	IRF7105PBF	38,067			0.336	0.319	0.302	0.285	0.269	>1wk

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7105PBF.

IHS

Datasheet10 pages21 years ago

Datasheet11 pages21 years ago

TME

Jameco

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-07-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7105PBF provided by its distributors.

Transistor MOSFET N P Channel 25 Volt 3.5 Amp-2.3 Amp 8 Pin SOIC

Jameco

Dual N/P-Channel 25 V 0.16/0.4 Ohm 27/25 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET N/P-CH 25V 3.5A/2.3A 8-Pin SOIC

Avnet

25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:25V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id N Channel 2:3.5A; Cont Current Id P Channel:2.3A; Current Id Max:3.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:100mohm; On State Resistance P Channel Max:250mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Pulse Current Idm N Channel 2:14A; Pulse Current Idm P Channel:10A; Row Pitch:6.3mm; SMD Marking:F7105; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:3V

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