Infineon IRF6795MTRPBF

Name: Infineon IRF6795MTRPBF
Brand: Infineon
SKU: IRF6795MTRPBF

Single N-Channel 25 V 32 mOhm 53 nC HEXFET® Power Mosfet - DirectFET®

$ 1.041

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet		IRF6795MTRPBF	4,800	4800							20h
Arrow Electronics	3	IRF6795MTRPBF	4,139	1		1.015	1.010	0.999	0.982	0.977
Rochester Electronics	2	IRF6795MTRPBF	36,656					1.320	1.100	0.977	18h
RS (Formerly Allied Electronics)		IRF6795MTRPBF	0	4800	Bulk					1.850	7h
Farnell	2	IRF6795MTRPBF	0	1	Cut Tape	1.330*	1.164*	0.964*	0.798*	0.798*	18h

Inventory History

3 month trend: -14.29%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF6795MTRPBF.

IHS

Datasheet9 pages16 years ago

Farnell

Future Electronics

Inventory History

3 month trend:

-14.29%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF6795MTRPBF

InfineonIRF6795MTR1PBF

Price @ 1000

$ 1.041

$ 2.7

Stock

1,580,555

71,119

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

25 V

Continuous Drain Current (ID)

32 A

Threshold Voltage

Rds On Max

1.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.8 W

Input Capacitance

4.28 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-05-27

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-05-15

LTD Date2023-11-15

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Descriptions

Descriptions of Infineon IRF6795MTRPBF provided by its distributors.

Single N-Channel 25 V 32 mOhm 53 nC HEXFET® Power Mosfet - DirectFET®

Future Electronics

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

N Channel, MOSFET, 200V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon