Infineon IRF6662TRPBF
$ 1.15
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.15
$ 3.04
Stock
140,196
11,185
Authorized Distributors
4
1
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
8.3 A
8.3 A
Threshold Voltage
-
3.9 V
Rds On Max
22 mΩ
22 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.8 W
89 W
Input Capacitance
1.36 nF
1.36 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-08-05
Lifecycle StatusObsolete (Last Updated: 4 weeks ago)
LTB Date2023-05-15
LTD Date2023-11-15
Related Parts
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N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK
Descriptions
Descriptions of Infineon IRF6662TRPBF provided by its distributors.
Single N-Channel 100 V 31 mOhm 22 nC HEXFET® Power Mosfet - DirectFET®
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3
2.8W(Ta)£¬89W(Tc) 20V 4.9V@ 100¦ÌA 31nC@ 10 V 1individualNChannel 100V 22m¦¸@ 8.2A,10V 8.3A£¬47A 1.36nF@25V MG-WDSON-5 direct mounting£¬SMD mount 6.35mm*5.05mm*700¦Ìm
MOSFET, N-CH, 100V, 47A, DIRECTFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)8.3 A
Current Rating8.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time5.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.36 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage100 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max22 mΩ
Resistance31 MΩ
Rise Time7.5 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height700 µm
Length5.45 mm
Width5.05 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements