STMicroelectronics STD70N10F4
$ 0.865
EOL
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Inventory History
3 month trend: +43.97%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD70N10F4.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-25
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-08-26
LTD Date2027-02-26
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Descriptions
Descriptions of STMicroelectronics STD70N10F4 provided by its distributors.
N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK
Power MOSFET, N Channel, 100 V, 60 A, 0.0195 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 60A I(D), 100V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:125W; No. of Pins:3Pins RoHS Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +43.97%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance19.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.8 nF
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation125 W
Rds On Max19.5 mΩ
Resistance19.5 mΩ
Rise Time20 ns
Schedule B8541290080
Turn-Off Delay Time65 ns
Turn-On Delay Time30 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD70N10F4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant