Infineon IRFR540ZPBF

Name: Infineon IRFR540ZPBF
Brand: Infineon
SKU: IRFR540ZPBF

Single N-Channel 100 V 28.5 mOhm 39 nC HEXFET® Power Mosfet - DPAK

$ 1.09

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR540ZPBF	0	5	Bulk		1.220	1.090	1.090	1.090	21h
Farnell	IRFR540ZPBF	0	5			0.986*	0.606*	0.554*	0.543*	8h
Win Source	WS-IRFR540ZPBF	27,210	75				0.674	0.522	0.522	9h
Worldway Electronics	IRFR540ZPBF	18,152	7	Tube		0.066	0.064	0.061	0.061	8h
Fly-Wing Technology	IRFR540ZPBF	110,734			0.538	0.441	0.428	0.400	0.400	6h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR540ZPBF.

IHS

Datasheet12 pages15 years ago

Datasheet11 pages15 years ago

Future Electronics

Newark

iiiC

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Alternate Parts

This Part

Alternate Parts

InfineonIRFR540ZPBF

InfineonIRFR540ZTRPBF

Price @ 1000

$ 1.09

$ 0.506

Stock

206,321

598,450

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

35 A

Threshold Voltage

4 V

Rds On Max

28.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

91 W

Input Capacitance

1.69 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-02-03

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFR540ZPBF provided by its distributors.

Single N-Channel 100 V 28.5 mOhm 39 nC HEXFET® Power Mosfet - DPAK

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Lighting LED

Infineon

MOSFET, N-CH 100V 35A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:91W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Package / Case:D-PAK; Power Dissipation Pd:91W; Power Dissipation Pd:91W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC