Infineon IRF540ZSPBF

Name: Infineon IRF540ZSPBF
Brand: Infineon
SKU: IRF540ZSPBF

IRF540ZSPBF N-channel MOSFET Transistor; 36 A; 100 V; 3-Pin D2PAK

$ 3.5

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF540ZSPBF	0	750	Bulk				3.500	3.070	15h
Farnell	IRF540ZSPBF	0	1		1.288*	1.288*	0.873*	0.538*	0.538*	9h
Win Source	WS-IRF540ZSPBF	10	2			32.565	29.196	29.196	29.196	1d
Worldway Electronics	IRF540ZSPBF	15,754	7	Tube		1.041	1.009	0.956	0.956	23h
Aztech	IRF540ZSPBF	319			9.200	9.200	9.200	9.200	9.200	19h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF540ZSPBF.

IHS

Datasheet13 pages15 years ago

Datasheet12 pages15 years ago

Future Electronics

Newark

DigiKey

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Alternate Parts

This Part

Alternate Parts

InfineonIRF540ZSPBF

InfineonAUIRF540ZS

Price @ 1000

$ 3.5

$ 2.45

Stock

53,676

44,898

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

36 A

Threshold Voltage

4 V

2 V

Rds On Max

26.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

92 W

Input Capacitance

1.77 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2002-05-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRF540ZSPBF provided by its distributors.

IRF540ZSPBF N-channel MOSFET Transistor; 36 A; 100 V; 3-Pin D2PAK

Fly-Wing Technology

100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 92 W

Distrelec

Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK Tube

Verical

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N, 100V, 36A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:36A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:26.5mohm; Package / Case:D2-PAK; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:140A; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC