Infineon AUIRF540ZS
$ 2.45
Obsolete
Price and Stock
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SKU
Min
Pkg
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Inventory History
No data available
CAD Models
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Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 2.45
$ 3.5
Stock
57,984
61,215
Authorized Distributors
1
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
36 A
36 A
Threshold Voltage
2 V
4 V
Rds On Max
26.5 mΩ
26.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
92 W
92 W
Input Capacitance
1.77 nF
1.77 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-20
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Related Parts
InfineonIPB35N10S3L26ATMA1
100V, N-Ch, 26.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
Descriptions
Descriptions of Infineon AUIRF540ZS provided by its distributors.
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 36A Automotive 3-Pin(2+Tab) D2PAK Tube
MOSFET N-Channel 100V 36A HEXFET D2PAK
Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET,N CH,100V,36A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:92W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:92W; Voltage Vgs Max:20V
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)36 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance26.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.77 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation92 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance26.5 mΩ
Package Quantity1000
PackagingRail/Tube
Power Dissipation92 W
Rds On Max26.5 mΩ
Rise Time51 ns
Threshold Voltage2 V
Turn-Off Delay Time43 ns
Turn-On Delay Time15 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements