Infineon IRF4905STRLPBF
$ 1.21
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 40M7917 | 2,874 | 1 | 2d | ||||||||
| Newark | IRF4905STRLPBF | 2,874 | 1 | Cut Tape | ||||||||
| Future Electronics | IRF4905STRLPBF | 159,200 | 800 | Tape & Reel | ||||||||
| Arrow Electronics | IRF4905STRLPBF | 1,262 | 1 | |||||||||
| Rutronik | TMOSP11794 | 12,800 | 800 | 16h |
Inventory History
3 month trend: +30.85%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.21
$ 3.405
$ 3.405
Stock
1,990,615
55,288
55,288
Authorized Distributors
6
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
-55 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
4 V
-
-
Rds On Max
20 mΩ
20 mΩ
20 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
150 W
170 W
170 W
Input Capacitance
3.5 nF
3.5 nF
3.5 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-07-26
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
InfineonIRFZ44NSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20
InfineonIRF4905SPBF
Transistor: P-MOSFET; unipolar; -70V; -44A; 0.02ohm; 170W; -55+150 deg.C; SMD; TO263 (D2PAK)
InfineonAUIRF4905STRL
Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Descriptions
Descriptions of Infineon IRF4905STRLPBF provided by its distributors.
Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - D2PAK
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.02Ohm;ID -74A;D2Pak;PD 200W;VGS +/-20V
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 55V 74A 3-Pin (2+Tab) D2PAK T/R
HEXFET Power MOSFET Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-74A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D2-Pak; Power Dissipation, Pd:200W ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 70 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 20 / Fall Time ns = 64 / Rise Time ns = 99 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 170
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +30.85%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity800
PackagingCut Tape
Power Dissipation150 W
Rds On Max20 mΩ
Resistance20 mΩ
Rise Time99 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time51 ns
Turn-On Delay Time20 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements