Infineon IRF3205PBF

Name: Infineon IRF3205PBF
Brand: Infineon
SKU: IRF3205PBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S

$ 0.678

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	63J7236	43,597	1		2.180	1.070	0.955	0.697	0.686	4d
Newark		IRF3205PBF	80,730	1		2.160	1.150	0.955	0.697	0.686
Future Electronics	3	IRF3205PBF	325,350	50	Tube			0.655	0.620	0.590
Arrow Electronics	2	IRF3205PBF	21,221	1		2.059	0.855	0.846	0.678	0.619
Rochester Electronics		IRF3205PBF	37,116					0.778	0.646	0.576	4h

Inventory History

3 month trend: -43.18%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3205PBF.

Newark

Datasheet8 pages15 years ago

Datasheet8 pages25 years ago

IHS

Upverter

RS (Formerly Allied Electronics)

Jameco

Inventory History

3 month trend:

-43.18%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF3205PBF

onsemiHUF75344P3

Price @ 1000

$ 0.678

$ 1.47

Stock

2,957,445

173,997

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

Rds On Max

8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

150 W

285 W

Input Capacitance

3.247 nF

3.2 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2014-01-09

LTD Date2014-07-09

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Descriptions

Descriptions of Infineon IRF3205PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 55 Volt 110 Amp 3 Pin 3+ Tab TO-220 AB

Jameco

Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

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55V 110A 8m´Î@10V62A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

N Channel Mosfet, 55V, 110A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF3205PBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon