Infineon IRF1104PBF
$ 0.915
Obsolete
Price and Stock
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SKU
Min
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China, USA
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-07
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
Related Parts
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MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 120A;TO-220AB;PD 140W;-55de
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Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A⑥) | MOSFET N-CH 30V 90A TO-220AB
InfineonIRFB7440PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Descriptions
Descriptions of Infineon IRF1104PBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.009Ohm;ID 100A;TO-220AB;PD 170W;VGS +/-20V
Transistor MOSFET Negative Channel 40 Volt 100A 3-Pin(3+Tab) TO-220AB
Single N-Channel 40 V 0.009 Ohm 93 nC HEXFET® Power Mosfet - TO-220-3
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220AB Tube
Infineon NChannelMOSTube, Vds=40 V, 100 A, TO-220ABencapsulation, Through hole mounting
Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Mosfet, N Ch, 40V, 100A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IRF1104PBF
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Current Rating100 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation170 W
Rds On Max9 mΩ
Recovery Time110 ns
Resistance9 mΩ
Rise Time114 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time28 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)40 V
Dimensions
Height20.56 mm
Length10.5156 mm
Width4.69 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements