Infineon IRF2805STRLPBF
$ 3.08
Obsolete
Price and Stock
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SKU
Min
Pkg
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Inventory History
Inventory history trend unavailable
CAD Models
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Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 3.08
$ 2.535
$ 2.535
Stock
212,998
249,263
249,263
Authorized Distributors
1
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vds)
55 V
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
-
4 V
4 V
Rds On Max
4.7 mΩ
4.7 mΩ
4.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
5.11 nF
5.11 nF
5.11 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-06-10
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2024-09-30
LTD Date2025-03-31
Related Parts
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55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
STMicroelectronicsSTB200NF04T4
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N-channel 40 V, 0.0043 Ohm typ., 120 A StripFET II Power MOSFET in D2PAK package
Descriptions
Descriptions of Infineon IRF2805STRLPBF provided by its distributors.
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 55 V 4.7 mOhm 230 nC HEXFET® Power Mosfet - TO-262
Trans MOSFET N-CH 55V 135A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Power FET Operating temperature: -55...+175 °C Housing type: DPAK Polarity: N Variants: Enhancement mode Power dissipation: 200 W
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 55V, 135A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:135A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vds)55 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.11 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.7 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max4.7 mΩ
Resistance4.7 Ω
Rise Time120 ns
Schedule B8541290080
Turn-Off Delay Time68 ns
Turn-On Delay Time14 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements