Infineon IRF1405ZSTRLPBF
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
$ 1.735
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-27
Lifecycle StatusObsolete (Last Updated: 7 months ago)
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Descriptions
Descriptions of Infineon IRF1405ZSTRLPBF provided by its distributors.
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Single N-Channel 55 V 4.9 mOhm 180 nC HEXFET® Power Mosfet - TO-262
Trans MOSFET N-CH 55V 150A 3-Pin(2+Tab) D2PAK T/R
230W(Tc) 20V 4V@ 250µA 180nC@ 10 V 1individualNChannel 55V 4.9mΩ@ 75A,10V 75A 4.78nF@25V D2PAK SMD mount 10mm*9.25mm*4.4mm
Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CH MOSFET, HEXFET AUTOMOTIVE, 55V 150A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time82 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.78 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.9 mΩ
Package Quantity800
Power Dissipation230 W
Rds On Max4.9 mΩ
Rise Time110 ns
Turn-Off Delay Time48 ns
Turn-On Delay Time18 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements