Infineon IRF1404PBF

Name: Infineon IRF1404PBF
Brand: Infineon
SKU: IRF1404PBF

Single N-Channel 40 V 0.004 Ohm 196 nC HEXFET® Power Mosfet - TO-220-3

$ 0.986

NRND

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	63J7187	855	1		3.050	1.660	1.520	1.260	1.260	11h
Newark		IRF1404PBF	8,416	1		3.050	1.660	1.520	1.260	1.260
Future Electronics	2	IRF1404PBF	600	50	Tube			0.910	0.860	0.815
Rochester Electronics		IRF1404PBF	103,286					1.160	0.963	0.858	9h
Arrow Electronics	3	IRF1404PBF	281,999	1		0.578	0.578	0.578	0.578	0.578

Inventory History

3 month trend: +0.67%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1404PBF.

IHS

Datasheet10 pages14 years ago

Datasheet9 pages14 years ago

Datasheet10 pages22 years ago

Factory Futures

Newark

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+0.67%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF1404PBF

InfineonAUIRF1404

Price @ 1000

$ 0.986

$ 4.9

Stock

2,239,044

250,505

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

75 A

160 A

Threshold Voltage

4 V

2 V

Rds On Max

4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

333 W

Input Capacitance

5.669 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-06-21

Lifecycle StatusNRND (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon IRF1404PBF provided by its distributors.

Single N-Channel 40 V 0.004 Ohm 196 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole

Avnet

Sensible Micro

MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB

RS (Formerly Allied Electronics)

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 333 W

Distrelec

Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Abacus Technologies

MOSFET, N, 40V, 162A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:202A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:4mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:650A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon