Infineon IRF1310NSTRRPBF
$ 3.01
Obsolete
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 3.01
$ 1.02
Stock
79,500
1,023,014
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
-
-
Rds On Max
36 mΩ
36 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
1.9 nF
1.9 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-10-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descriptions
Descriptions of Infineon IRF1310NSTRRPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS +/-20V
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance36 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max36 mΩ
Rise Time56 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time11 ns
Dimensions
Height4.957 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements