Infineon IRF1310NSTRLPBF
$ 0.991
Production
Inventory History
3 month trend: -14.88%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.991
$ 3.01
Stock
984,178
79,409
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
-
-
Rds On Max
36 mΩ
36 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
1.9 nF
1.9 nF
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Descriptions
Descriptions of Infineon IRF1310NSTRLPBF provided by its distributors.
Single N-Channel 100 V 160 W 110 nC Hexfet Power Mosfet Surface Mount - D2PAK
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS +/-20V
Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 42A D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 56 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 160
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -14.88%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance36 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max36 mΩ
Rise Time56 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements