Infineon IR25604SPBF

HIGH AND LOW SIDE DRIVER / Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Tube IR25604SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW

600 V high-side and low-side gate driver IC, SOIC 8N, RoHS

IR25604 Series 10 - 20 V 350 mA High and Low Side Mosfet IGBT Driver - SOIC-8

HIGH AND LOW SIDE DRIVER Half Bridge Based Peripheral Driver, CMOS, PDSO8

Non-Inverting IGBT/MOSFET, N-Ch, 150ns, 10V, 300ns, 20V, 800mV/2.9V, 50ns, Half-Bridge, 200mA/350mA, SOIC-8, SMD, 1.5mm H

DRIVER, GATE, HS / LS, 0.35A, 8SOIC; Device Type:IGBT, MOSFET; Module Configuration:High and Low Side; Peak Output Current:350mA; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:SOIC; No. of Pins:8; Input Delay:220ns; Output Delay:200ns; Operating Temperature Min:-40°C; Operating Temperature Max:125°C; MSL:(Not Available); SVHC:No SVHC (19-Dec-2012)

600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. | Summary of Features: Floating channel designed for bootstrap operation; Integrated 600 V half-bridge gate driver; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V and 15 V input logic compatible; Matched propagation delay for both channels; Logic and power ground +/- 5 V offset; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs