Infineon IR2213SPBF

Name: Infineon IR2213SPBF
Brand: Infineon
SKU: IR2213SPBF

1200 V high-side and low-side gate driver IC with enable and shutdown, SOIC 16W, RoHS

$ 3.32

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Distributor		SKU		Min	Pkg
Avnet		IR2213SPBF	1,349	1		3.099	2.985	2.942	2.942	2.942	11h
Newark		IR2213SPBF	1,349	1		3.100	3.100	3.100	3.100	3.100
Rochester Electronics		IR2213SPBF	1,466					3.320	2.970	2.790	9h
Arrow Electronics	2	IR2213SPBF	190	1		5.871	4.206	4.030	3.918	3.918
DigiKey		IR2213SPBF-ND	1,285	1	Tube	7.630	5.860	5.188	4.546	4.440

Inventory History

3 month trend: -8.18%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IR2213SPBF.

SHENGYU ELECTRONICS

Datasheet18 pages10 years ago

IHS

iiiC

Inventory History

3 month trend:

-8.18%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8542.39.00.01

Introduction Date1999-01-01

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IR2213SPBF provided by its distributors.

1200 V high-side and low-side gate driver IC with enable and shutdown, SOIC 16W, RoHS

Infineon SCT

IR2213 Series 20 V 2 A Surface Mount High and Low Side Driver - SOIC-16

Future Electronics

Tube IR2213SPBF Half-Bridge 1996 gate driver 25ns 125C 2A 2.5A 1W

Fly-Wing Technology

25ns 2 12V 280ns 20V 6V,9.5V Non-Inverting IGBT,MOSFET,N 17ns 2A,2.5A SOIC-16 2.35mm

Unikeyic (ICkey)

MOSFET DRVR 1.2KV 2.5A 2-OUT Hi/Lo Side Non-Inv 16-Pin SOIC W Tube

Avnet

DRIVER, MOSFET, HIGH/LOW SIDE, 2213; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:2.5A; Input Delay:280ns; Output Delay:225ns; Supply Voltage Range:12V to 20V; Driver Case Style:SOIC; No. of Pins:16; Operating Temperature Range:-40°C to +125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:2213; IC Generic Number:2213; Logic Function Number:2213; No. of Outputs:2; Offset Voltage:1200V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:2A; Output Current + Max:2000mA; Output Sink Current Min:2000mA; Output Source Current Min:1700mA; Output Voltage:1220V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Packaging Type:Peel Pack; Power Dissipation Pd:1.25W; Supply Voltage Max:20V; Supply Voltage Min:12V; Termination Type:SMD; Voltage Vcc Max:25V; Voltage Vcc Min:10V

element14 APAC

EiceDRIVER™ 1200 V high- and low-side gate driver IC with typical 2.0 A source and 2.5 A sink currents in DSO-16 lead, wide-body package for IGBT discretes and IGBT modules.IR2213S utilizes proprietary 1200 V HVIC and latch immune CMOS technologies which enable a rugged, monolithic construction with integrated protective features such under voltage lockout protection, shutdown, and separate logic and power ground.The IR2213S three-phase gate driver is well suited for low- and medium- power designs up to 10 kW or higher power levels with additional external buffer current driver. IR2213S provides high performance drive capability with protective features for a cost-competitive solution.IR2213S belongs to the 1200 V level-shift junction isolated (JI) gate driver family.

Infineon