Infineon IR2181STRPBF

MOSFET Driver, High Side and Low Side, 10 V to 20 V Supply, 2.3 A Out, 220 ns Delay, SOIC-8

600 V high-side and low-side gate driver IC, SOIC 8N, RoHS

IR2181 Series 600 V 1.9 A 20 V Supply Dual High And Low Side Driver - SOIC-8

Tape & Reel (TR) IR2181SPBF Half-Bridge 1996 gate driver 40ns 20ns -40C~150C TJ 1.9A 2.3A 0.8V 2.7V

Driver 600V 2.3A 2-OUT High and Low Side Non-Inv 8-Pin SOIC N T/R / IC DRIVER HIGH/LOW SIDE 8SOIC

Half Bridge 2.3A 10V~20V 1.9A SOIC-8 Gate Drive ICs ROHS

Gate Drivers; IR2181STRPBF; INFINEON TECHNOLOGIES; 2; 625 mW; 2; 2.3 A

EiceDRIVER™ 600 V high and low-side Gate Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14-Lead PDIP .For the new version with our SOI technology we recommend 2ED2181S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.