Infineon IR2136STRPBF

Gate Driver, Half-Bridge, 600V, 200mA Source, 350mA Sink, Three Phase, WSOIC-28

IR2136 Series 600 V 350 mA 20 V Supply Six 3 Phase Bridge Driver - SOIC-28

600 V three-phase gate driver IC with enable, fault reporting and over current protection, SOIC 28W, RoHS

Half Bridge 350mA 10V~20V 200mA SOIC-28-300mil Gate Drive ICs ROHS

MOSFET DRVR 600V 0.35A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin SOIC W T/R

Tape & Reel (TR) IR2136SPBF Half-Bridge 1996 gate driver 125ns 50ns -40C~150C TJ 200mA 350mA 0.8V 3V

3-PHASE BRIDGE DRIVER Half Bridge Based MOSFET Driver, 0.35A, BICMOS, PDSO28

Gate Drivers; IR2136STRPBF; INFINEON TECHNOLOGIES; 6; 1.6 W; 6; 350 mA

No. of Channels:6Channels; Driver Configuration:Half Bridge; Power Switch Type:IGBT, MOSFET; No. of Pins:28Pins; Driver Case Style:WSOIC; Input Type:Inverting; Source Current:200mA; Sink Current:350mA; Supply Voltage Min:10V; MSL:- RoHS Compliant: Yes

EiceDRIVER™ 600 V three phase gate driver IC with typical 0.2 A source and 0.35 A sink current in SOIC-28 wide body package with junction-isolated level-shift technology for IGBTs and MOSFETs.For improved negative transient voltage robustness up to -100 V and 50% lower level shift losses, please check our Infineon SOI 600 V three phase gate driver 6EDL04I06PT, 6EDL04I06NT, 6EDL04N06PT. Or 6EDL04N02PR which is a 200 V, 3-phase gate driver available in TSSOP-28 package。

The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.