Infineon IQE050N08NM5ATMA1

Mosfet, N-Ch, 80V, 101A, Tson-8 Rohs Compliant: Yes |Infineon Technologies IQE050N08NM5ATMA1

Power MOSFET, N Channel, 80 V, 101 A, 0.0043 ohm, TSON, Surface Mount

Infineon NMOS, Vds=80 V, 101 A, PQFN 3 x 3, , 8

Trans MOSFET N-CH 80V 16A 8-Pin TSON EP T/R

Power Field-Effect Transistor, 101A I(D), 80V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

The IQE050N08NM5 is Infineon’s extension of the innovative Source-Down technology. The OptiMOS™ 5 80 V PQFN 3.3x3.3 Source-Down features 80 V and low RDS(on) of 5.0 mOhm. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on) and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management. The Source-Down portfolio is addressing applications, such as Drives, Telecom, SMPS or Server. The new technology can be found in two different footprints for now: Source-Down Standard-Gate and Source-Down Center-Gate (optimized for parallelization).