Infineon IQE006NE2LM5ATMA1

Mosfet, N-Ch, 25V, 298A, Tson Rohs Compliant: Yes |Infineon Technologies IQE006NE2LM5ATMA1

Transistor MOSFET N-CH 25V 298A 8-Pin TSON T/R

Infineon NMOS, Vds=25 V, 298 A, PQFN 3 x 3, , 8

Trans MOSFET N-CH 25V 41A 8-Pin TSON EP T/R

Power Field-Effect Transistor, 298A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

场效应管, MOSFET, N沟道, 25V, 298A, TSON;

1.1 mm 2.1 W 1 5.3 ns 27 ns 150 °C -55 °C 500 µΩ

The innovative Source-Down OptiMOS™ low-voltage power MOSFET 25V (IQE006NE2LM5) comes in a PQFN3.3x3.3 package size, making it easy to use in the same PCB routing as the Drain-Down solution. In the same package outline of 3.3x3.3mm, the new Source-Down shows an industry benchmark RDS(on) by reducing the current standard RDS(on) of about 30 percent. In addition Source-Down shows a significant shrink of form factor. The same performance as a 5x6mm SuperSO8 is now achievable in a PQFN3.3x3.3 to use the PCB real estate more efficiently. Source-Down also offers a better transfer of power losses which means a superior thermal management. Overall the new and innovative Source-Down technology enables higher system efficiency and power density in the end application. This is especially necessary in drives, telecom, SMPS and server.