Infineon IPT029N08N5ATMA1

Name: Infineon IPT029N08N5ATMA1
Brand: Infineon
SKU: IPT029N08N5ATMA1

Mosfet, N-Ch, 80V, 169A, Hsof Rohs Compliant: Yes |Infineon Technologies IPT029N08N5ATMA1

$ 2.19

EOL

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Distributor		SKU		Min	Pkg
Newark	2	IPT029N08N5ATMA1	1,593	5	Cut Tape		3.850	3.240	3.240	3.240
Arrow Electronics		IPT029N08N5ATMA1	2,000	1		1.745	1.745	1.745	1.745	1.745
Rochester Electronics		IPT029N08N5ATMA1	10,203					1.800	1.610	1.510	15h
Future Electronics	2	IPT029N08N5ATMA1	0	2K	Tape & Reel					2.040
Avnet		IPT029N08N5ATMA1	0	2K						1.875	3d

Inventory History

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CAD Models

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Datasheets & Documents

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IHS

Datasheet11 pages0 years ago

TME

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Supply Chain

Country of OriginAustria, Germany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-01-22

Lifecycle StatusEOL (Last Updated: 2 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

Descriptions

Descriptions of Infineon IPT029N08N5ATMA1 provided by its distributors.

Mosfet, N-Ch, 80V, 169A, Hsof Rohs Compliant: Yes |Infineon Technologies IPT029N08N5ATMA1

Newark

168W(Tc) 20V 3.8V@ 108¦ÌA 87nC@ 10 V 1N 80V 2.9m¦¸@ 150A,10V 169A 6.5nF@40V HSOF-8

UnikeyIC

MOSFET N-CH 80V 52A/169A HSOF-8 / N-Channel 80 V 52A (Ta), 169A (Tc) 168W (Tc) Surface Mount PG-HSOF-8-1

Win Source

Trans MOSFET N-CH 80V 52A 9-Pin(8+Tab) HSOF T/R

Verical

Power Transistor 80V OPTIMOS-5, PG-HSOF-8, RoHS

Infineon SCT

Power Field-Effect Transistor, 169A I(D), 80V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

场效应管, MOSFET, N沟道, 80V, 169A, PG-HSOF;

element14 APAC

MOSFET N-CH 80V 52A/169A HSOF-8

DigiKey

IPT029N08N - OPTIMOS POWER MOSFE

DigiKey Marketplace

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

Infineon