Infineon IPT014N08NM5ATMA1
$ 2.768
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IPT014N08NM5ATMA1 | 18 | 1 | Cut Tape | ||||||||
| Rutronik | TMOS6149 | 40,000 | 2K | 4h | ||||||||
| Rochester Electronics | IPT014N08NM5ATMA1 | 434,508 | 21h | |||||||||
| DigiKey | 448-IPT014N08NM5ATMA1CT-ND | 1,998 | 1 | Cut Tape | ||||||||
| Future Electronics | IPT014N08NM5ATMA1 | 0 | 2K | Tape & Reel |
Inventory History
3 month trend: -0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPT014N08NM5ATMA1.
CAD Models
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| source | eCAD | mCAD | FILES |
|---|---|---|---|
 EE Concierge | SymbolFootprint |
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Supply Chain
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-12-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of Infineon IPT014N08NM5ATMA1 provided by its distributors.
Mosfet, N-Ch, 331A, Hsof Rohs Compliant: Yes |Infineon Technologies IPT014N08NM5ATMA1
300W(Tc) 3.8V@ 280¦ÌA 200nC@ 10 V 1N 80V 1.4m¦¸@ 150A,10V 331A 14nF@40V HSOF-8-1
Trans MOSFET N-CH 80V 37A 9-Pin(8+Tab) HSOF T/R
MOSFET N-CH 80V 37A/331A HSOF-8
The IPT014N08NM5 is Infineon’s OptiMOS™ power MOSFET 1.4 mOhm, 80 V in a TO-Leadless (TOLL) package with a high current capability of 331 A (ID @25 ˚C).Infineon’s OptiMOS™ 5 silicon technology of power MOSFETs is especially designed for synchronous rectification for telecom and server power supplies. Combined with the TOLL package, IPT014N08NM5 is optimized for battery-powered applications, including LV drives, drones, and e-bikes.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)331 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance1.4 mΩ
Drain to Source Voltage (Vdss)80 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Manufacturer Package IdentifierPG-HSOF-8
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation300 W
Turn-Off Delay Time61 ns
Turn-On Delay Time32 ns
Dimensions
Height2.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPT014N08NM5ATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements