Infineon IPT012N06NATMA1

Name: Infineon IPT012N06NATMA1
Brand: Infineon
SKU: IPT012N06NATMA1

MOSFET N-CH 60V 240A 8HSOF / N-Channel 60 V 240A (Tc) 214W (Tc) Surface Mount PG-HSOF-8-1

$ 2.167

Production

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Price and Stock

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Distributor		SKU		Min	Pkg
Newark	2	IPT012N06NATMA1	1,804	5	Cut Tape		4.160	4.160	4.160	4.160
Rochester Electronics		IPT012N06NATMA1	160,304					1.760	1.570	1.480	11m
DigiKey	2	448-IPT012N06NATMA1CT-ND	1,912	1	Cut Tape	5.210	3.456	2.459	2.164	2.164
Avnet		IPT012N06NATMA1	0	2K						1.861	2d
Future Electronics	2	IPT012N06NATMA1	0	2K	Tape & Reel					2.030

Inventory History

3 month trend: +10.47%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

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IHS

Datasheet11 pages0 years ago

Inventory History

3 month trend:

+10.47%

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Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-12-09

Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Infineon IPT012N06NATMA1 provided by its distributors.

MOSFET N-CH 60V 240A 8HSOF / N-Channel 60 V 240A (Tc) 214W (Tc) Surface Mount PG-HSOF-8-1

Win Source

Mosfet, N-Ch, 60V, 313A, Hsof Rohs Compliant: Yes |Infineon Technologies IPT012N06NATMA1

Newark

MOSFETs; IPT012N06N; INFINEON TECHNOLOGIES; 60 V; 313 A; 20 V; 214 W

Maritex

Trans MOSFET N-CH 60V 41A 9-Pin(8+Tab) HSOF T/R

Verical

Power Field-Effect Transistor, 41A I(D), 60V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

214W 20V 106nC@ 10V 1N 60V 1.2m¦¸@ 10V 7.8nF@ 30V HSOF-8

UnikeyIC

场效应管, MOSFET, N沟道, 60V, 313A, PG-HSOF;

element14 APAC

Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

Infineon