Infineon IPP60R099CPXKSA1

Name: Infineon IPP60R099CPXKSA1
Brand: Infineon
SKU: IPP60R099CPXKSA1

255W(TC) 20V 3.5V@1.2MA 80NC@ 10 V 1N 600V 99M¦¸@ 18A, 10V 31A 2.8NF@100V TO-220, TO-220-3 9.45MM

$ 3.51

NRND

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Distributor	SKU		Min	Pkg
Newark	IPP60R099CPXKSA1	500	1		6.960	3.970	3.640	3.620	3.620
Arrow Electronics	IPP60R099CPXKSA1	31	1		4.481	4.481	4.481	4.481	4.481
Rochester Electronics	IPP60R099CPXKSA1	6,359					3.070	2.750	2.580	21h
DigiKey	IPP60R099CPXKSA1-ND	1,351	1	Tube	7.870	7.870	3.887	3.078	3.066
Avnet	IPP60R099CPXKSA1	0	500					3.315	3.066	5d

Inventory History

3 month trend: -5.91%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP60R099CPXKSA1.

IHS

Datasheet10 pages15 years ago

element14 APAC

iiiC

TME

Farnell

Inventory History

3 month trend:

-5.91%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-12-16

Lifecycle StatusNRND (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IPP60R099CPXKSA1 provided by its distributors.

255W(Tc) 20V 3.5V@1.2mA 80nC@ 10 V 1N 600V 99m¦¸@ 18A,10V 31A 2.8nF@100V TO-220,TO-220-3 9.45mm

Unikeyic (ICkey)

Trans MOSFET N-CH 650V 31A 3-Pin(3+Tab) TO-220 Tube

Verical

COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Infineon

MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:31A; On State Resistance:0.099ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes

Newark

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:650V; On Resistance Rds(on):99mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:255W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:31A; Package / Case:TO-220; Power Dissipation Pd:255W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC