Infineon IPP60R070CFD7XKSA1

Name: Infineon IPP60R070CFD7XKSA1
Brand: Infineon
SKU: IPP60R070CFD7XKSA1

N-Channel 600V 31A(Tc) 4.5V @ 760uA 70mΩ @ 15.1A, 10V 156W (Tc) PG-TO220-3 MOSFET RoHS

$ 2.95

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Distributor		SKU		Min	Pkg
Avnet	2	43AC9326	24	1		7.150	4.320	4.040	3.920	3.920	22h
Newark		IPP60R070CFD7XKSA1	24	1		1.220	1.220	1.220	1.220	1.220
Arrow Electronics	2	IPP60R070CFD7XKSA1	488	1		3.065	3.065	3.065	3.065	3.065
Future Electronics	2	IPP60R070CFD7XKSA1	300	50	Tube			5.280	5.180	5.150
Rochester Electronics		IPP60R070CFD7XKSA1	84,319					2.570	2.300	2.170	20h

Inventory History

3 month trend: -0.21%

CAD Models

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Datasheets & Documents

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IHS

Datasheet14 pages0 years ago

Farnell

Inventory History

3 month trend:

-0.21%

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Supply Chain

Country of OriginAustria, Germany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-08-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Infineon IPP60R070CFD7XKSA1 provided by its distributors.

N-Channel 600V 31A(Tc) 4.5V @ 760uA 70mΩ @ 15.1A,10V 156W (Tc) PG-TO220-3 MOSFET RoHS

Utmel Electronic

Transistor MOSFET N-CH 600V 31A 3-Pin TO-220 Tube

Avnet

Power Field-Effect Transistor, 31A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Mosfet, N-Ch, 600V, 31A, 150Deg C, 156W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IPP60R070CFD7XKSA1

Newark

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Infineon