Infineon IPN60R1K5PFD7SATMA1

600V CoolMOS PFD7 superjunction MOSFET in SOT-223 package

Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) SOT-223 T/R

Mosfet, N-Ch, 600V, 3.6A, Sot-223 Rohs Compliant: Yes |Infineon Technologies IPN60R1K5PFD7SATMA1

6W(Tc) 20V 4.5V@ 40¦ÌA 4.6nC@ 10 V 1N 600V 1.5¦¸@ 700mA,10V 1899-12-31 06:00:00 169pF@400V SOT-223

Power Field-Effect Transistor, 3.6A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261

This 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R1K5PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R1K5PFD7S in a SOT-223 package features RDS(on) of 1,500mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. Infineon's industry-leading SMD packages further reduce PCB space and facilitate manufacturing.This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.