Infineon IPL65R095CFD7AUMA1

Name: Infineon IPL65R095CFD7AUMA1
Brand: Infineon
SKU: IPL65R095CFD7AUMA1

Power MOSFET, N Channel, 650 V, 29 A, 0.068 ohm, VSON, Surface Mount

$ 2.7

Production

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	25AK0801	1,441	1		5.780	3.910	3.180	2.960	2.960	12h
Newark		IPL65R095CFD7AUMA1	10,162	1	Cut Tape	2.810	2.810	2.810	2.700	2.700
Rochester Electronics		IPL65R095CFD7AUMA1	2,820					2.230	2.000	1.880	10h
DigiKey	2	448-IPL65R095CFD7AUMA1CT-ND	70	1	Cut Tape	6.220	4.158	2.990	2.741	2.741
Future Electronics	2	IPL65R095CFD7AUMA1	0	3K	Tape & Reel					4.480

Inventory History

3 month trend: +62.93%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPL65R095CFD7AUMA1.

Inventory History

3 month trend:

+62.93%

Powered by

Supply Chain

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-07-28

Lifecycle StatusProduction (Last Updated: 1 week ago)

Descriptions

Descriptions of Infineon IPL65R095CFD7AUMA1 provided by its distributors.

Power MOSFET, N Channel, 650 V, 29 A, 0.068 ohm, VSON, Surface Mount

EBV Elektronik

Trans MOSFET N-CH 650V 29A 4-Pin VSON EP T/R

Verical

Power Field-Effect Transistor, 29A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon NMOS, Vds=650 V, 29 A, ThinPAK 8 x 8, , 5

UnikeyIC

COOLMOS CFD7 SUPERJUNCTION MOSFE

DigiKey

Mosfet, N-Ch, 650V, 29A, Vson; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:-Rohs Compliant: Yes |Infineon Technologies IPL65R095CFD7AUMA1

Newark

Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPL65R095CFD7 in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Infineon