Infineon IPI08CN10N G
Descriptions
Descriptions of Infineon IPI08CN10N G provided by its distributors.
MOSFET N-CH 100V 95A TO262-3 / N-Channel 100 V 95A (Tc) 167W (Tc) Through Hole PG-TO262-3
MOSFET N-CH 100V 95A TO262-3
MOSFET, N CH, 95A, 100V, PG-TO262-3; Transistor Polarity:N Channel; Current Id Max:95A; Drain Source Voltage Vds:100V; On State Resistance:6.4mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:167W; Operating ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)95 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.66 nF
Max Operating Temperature175 °C
Max Power Dissipation167 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Power Dissipation167 W
Rds On Max8.5 mΩ
Rise Time24 ns
Threshold Voltage3 V
Turn-Off Delay Time26 ns