Infineon IPD95R2K0P7ATMA1

Mosfet, N-Ch, 950V, 4A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD95R2K0P7ATMA1

TRANSISTOR, MOSFET, 950V COOLMOS, P7 SJ POWER, 2 OHM, 4AMP, TO252

Power MOSFET, N Channel, 950 V, 4 A, 2 ohm, TO-252 (DPAK), Surface Mount

Power Field-Effect Transistor, 4A I(D), 950V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market, PG-TO252-3, RoHS

MOSFET, 950V, 4A, 150DEG C, 37W; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:950V; On Resistance Rds(on):1.71ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.