Infineon IPD900P06NMATMA1

Name: Infineon IPD900P06NMATMA1
Brand: Infineon
SKU: IPD900P06NMATMA1

Transistor Mosfet P-ch 60V 16.4A 3-PIN TO-252 T/r

$ 0.406

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Distributor		SKU		Min	Pkg
Newark		IPD900P06NMATMA1	1,767	1	Cut Tape	1.410	0.890	0.589	0.418	0.418
Arrow Electronics		IPD900P06NMATMA1	2,494	1		0.346	0.346	0.346	0.346	0.346
Rochester Electronics		IPD900P06NMATMA1	2,559					0.423	0.351	0.313	19m
DigiKey	3	448-IPD900P06NMATMA1CT-ND	7,885	1	Cut Tape	1.450	0.916	0.607	0.431	0.431
Future Electronics		IPD900P06NMATMA1	0	2500	Tape & Reel					0.300

Inventory History

3 month trend: -1.48%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD900P06NMATMA1.

IHS

Datasheet10 pages0 years ago

Inventory History

3 month trend:

-1.48%

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Supply Chain

Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Infineon IPD900P06NMATMA1 provided by its distributors.

Transistor MOSFET P-CH 60V 16.4A 3-Pin TO-252 T/R

EBV Elektronik

63W(Tc) 20V 4V@ 710¦ÌA 27nC@ 10 V 1P 60V 90m¦¸@ 16.4A,10V 16.4A 1.1nF@30V TO-252-3

UnikeyIC

Mosfet, P-Ch, -60V, -16.4A, 175Deg C Rohs Compliant: Yes |Infineon Technologies IPD900P06NMATMA1

Newark

Trans MOSFET P-CH 60V 16.4A 3-Pin(2+Tab) DPAK T/R

Verical

Power Field-Effect Transistor, 16.4A I(D), 60V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

COM,-60V-16A 90OHM SINGLE P-CH DPAK (TO-252)

Future Electronics

OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.

Infineon