Infineon IPD80R3K3P7ATMA1

Name: Infineon IPD80R3K3P7ATMA1
Brand: Infineon
SKU: IPD80R3K3P7ATMA1

MOSFET N-CH 800V 1.9A TO252-3 / N-Channel 800 V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3

$ 0.314

Production

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Price and Stock

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Distributor		SKU		Min	Pkg
Newark		IPD80R3K3P7ATMA1	2,219	1	Cut Tape	0.652	0.635	0.503	0.418	0.418
Arrow Electronics	3	IPD80R3K3P7ATMA1	1,740	1		0.288	0.287	0.287	0.287	0.287
Rochester Electronics		IPD80R3K3P7ATMA1	27,500					0.322	0.268	0.239	5h
DigiKey		IPD80R3K3P7ATMA1TR-ND	2,500	2500	Tape & Reel					0.273
Avnet		IPD80R3K3P7ATMA1	0	2500						0.254	1d

Inventory History

3 month trend: -1.88%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD80R3K3P7ATMA1.

IHS

Datasheet13 pages0 years ago

Future Electronics

TME

Inventory History

3 month trend:

-1.88%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-05-02

Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Infineon IPD80R3K3P7ATMA1 provided by its distributors.

MOSFET N-CH 800V 1.9A TO252-3 / N-Channel 800 V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3

Win Source

Power Field-Effect Transistor, 1.9A I(D), 800V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

Mosfet, N-Ch, 800V, 1.9A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes |Infineon Technologies IPD80R3K3P7ATMA1

Newark

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Infineon