Infineon IPD60R2K1CEAUMA1

Name: Infineon IPD60R2K1CEAUMA1
Brand: Infineon
SKU: IPD60R2K1CEAUMA1

Mosfet, N-Ch, 600V, 3.7A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60R2K1CEAUMA1

$ 0.265

NRND

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Distributor		SKU		Min	Pkg
Newark	2	IPD60R2K1CEAUMA1	56	5	Cut Tape		0.598	0.409	0.328	0.328
Rutronik		TMOS2452	17,500	2500						0.177	7h
Rochester Electronics		IPD60R2K1CEAUMA1	213,800					0.206	0.171	0.152	23h
Arrow Electronics	2	IPD60R2K1CEAUMA1	10,000	2500						0.165
DigiKey	3	IPD60R2K1CEAUMA1CT-ND	6,431	1	Cut Tape	1.030	0.641	0.415	0.286	0.286

Inventory History

3 month trend: -4.85%

CAD Models

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Datasheets & Documents

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IHS

Datasheet14 pages0 years ago

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Inventory History

3 month trend:

-4.85%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-09-25

Lifecycle StatusNRND (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPD60R2K1CEAUMA1 provided by its distributors.

Mosfet, N-Ch, 600V, 3.7A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60R2K1CEAUMA1

Newark

Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS

Infineon SCT

MOSFET, N-CH, 600V, 3.7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe

element14 APAC

Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

Infineon