Infineon IPD60R210PFD7SAUMA1

N-Channel 650 V 16 A 210 mOhm Surface Mount Mosfet - PG-TO252-3-344

Mosfet, N-Ch, 600V, 16A, To-252/Dpak Rohs Compliant: Yes |Infineon Technologies IPD60R210PFD7SAUMA1

Cap Ceramic 0.0056uF 25V X7R 5% SMD 0402 125C Paper T/R

Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) DPAK T/R

Power Field-Effect Transistor, 16A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

INFINEON MOSFET IPD60R210PFD7SAUMA1

IPD60R210PFD7S - MOSFET N-CHANNE

MOS, Vds=650 V, 42 A, PG-TO252

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R210PFD7S in a TO-252 DPAK package features RDS(on) of 210mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer.This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.