Dark mode is now available! Toggle between light and dark modes. Preference saves when signed in.

Learn more

Infineon IPD50N06S409ATMA2

60V, N-Ch, 9 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
$ 0.631
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD50N06S409ATMA2.

element14 APAC

Datasheet9 pages17 years ago

Inventory History

3 month trend:
+157%

CAD Models

Download Infineon IPD50N06S409ATMA2 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
EE Concierge
SymbolFootprint
Ultra Librarian
SymbolFootprint
Download
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

Single N-Channel 60 V 7.9 mOhm 58 nC HEXFET® Power Mosfet - TO-252-3
InfineonIRFR7546PBF
Single N-Channel 60 V 6.6 mOhm 58 nC HEXFET® Power Mosfet - TO-252AA
Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-252-3
Diodes Inc.DMT6009LK3-13
Trans MOSFET N-CH 60V 57A 3-Pin TO-252 T/R
Diodes Inc.DMTH6009LK3Q-13
Trans MOSFET N-CH 60V 14.2A Automotive 3-Pin(2+Tab) DPAK T/R
Diodes Inc.DMTH6009LK3-13
DMTH6009 Series 60 V 14.2 A 10 mOhm SMT Single N-Channel MOSFET - TO-252
Single N-Channel 60 V 15.8 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA
onsemiFDD5680
N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
STMicroelectronicsSTD35P6LLF6
P-channel 60 V, 0.025 Ohm typ., 35 A STripFET F6 Power MOSFET in a DPAK package

Descriptions

Descriptions of Infineon IPD50N06S409ATMA2 provided by its distributors.

60V, N-Ch, 9 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
71KW 20V 4V 36nC@ 10V 2individualNChannel 60V 9mΩ@ 10V 60A 2.911nF@ 25V TO-252,TO-252-3 Bracket mounting,SMD mount 2.56mm(height)
MOSFET, AEC-Q100, N-CH, 60V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0071ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPD50N06S4-09
  • IPD50N06S409ATMA1
  • SP000374321
  • SP001028662