Dark mode is now available! Toggle between light and dark modes. Preference saves when signed in.

Learn more

Infineon IPD30N06S215ATMA2

Mosfet Transistor, N Channel, 30 A, 55 V, 0.0113 Ohm, 10 V, 3 V
$ 0.778
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD30N06S215ATMA2.

element14 APAC

Datasheet8 pages20 years ago

iiiC

Inventory History

3 month trend:
-0.01%

CAD Models

Download Infineon IPD30N06S215ATMA2 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3D
Download
EE Concierge
SymbolFootprint
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-07-18
Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 12 Milliohms;ID 61A;D-Pak (TO-252AA);PD 120W
InfineonIRLR3915PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 12 Milliohms;ID 61A;D-Pak (TO-252AA);PD 120W
InfineonIRFR5305PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
Diodes Inc.DMP4015SK3Q-13
Trans MOSFET P-CH 40V 14A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 14A TO252 DPAK
VISHAY SQD30N05-20L -GE3 MOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8

Descriptions

Descriptions of Infineon IPD30N06S215ATMA2 provided by its distributors.

Mosfet Transistor, N Channel, 30 A, 55 V, 0.0113 Ohm, 10 V, 3 V
N-Channel 55 V 14.7 mOhm 110 nC OptiMOS® Power-Transistor - PG-TO252-3-11
55V, N-Ch, 14.7 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
136W(Tc) 20V 4V@ 80µA 110nC@ 10 V 1individualNChannel 55V 14.7mΩ@ 30A,10V 30A 1.485nF@25V TO-252 SMD mount 6.5mm*6.22mm*2.3mm
MOSFET, N-CH, 55V, 30A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPD30N06S2-15
  • IPD30N06S2-15ATMA2
  • IPD30N06S215
  • IPD30N06S215ATMA1
  • SP001061724