Infineon IPD096N08N3GATMA1

Name: Infineon IPD096N08N3GATMA1
Brand: Infineon
SKU: IPD096N08N3GATMA1

Trans MOSFET N-CH 80V 73A 3-Pin(2+Tab) DPAK T/R

$ 0.611

NRND

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Distributor		SKU		Min	Pkg
Avnet	2	34AC1666	89	1		1.950	1.250	0.833	0.660	0.660	2d
Newark		IPD096N08N3GATMA1	89	1	Cut Tape	1.950	1.250	0.833	0.611	0.611
Rochester Electronics		IPD096N08N3GATMA1	2,057					0.658	0.546	0.487	23h
DigiKey	2	IPD096N08N3GATMA1CT-ND	2,316	1	Cut Tape	1.890	1.201	0.809	0.597	0.597
Future Electronics	2	IPD096N08N3GATMA1	0	2500	Tape & Reel					0.470

Inventory History

3 month trend: -25.14%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet9 pages11 years ago

_legacy Avnet

Inventory History

3 month trend:

-25.14%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-10-20

Lifecycle StatusNRND (Last Updated: 3 months ago)

Descriptions

Descriptions of Infineon IPD096N08N3GATMA1 provided by its distributors.

Trans MOSFET N-CH 80V 73A 3-Pin(2+Tab) DPAK T/R

Verical

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Infineon

Power Field-Effect Transistor, 73A I(D), 80V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 80V, 73A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 73A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0079ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

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