Infineon IPB330P10NMATMA1

Name: Infineon IPB330P10NMATMA1
Brand: Infineon
SKU: IPB330P10NMATMA1

Power MOSFET, P Channel, 100 V, 62 A, 0.0268 ohm, TO-263 (D2PAK), Surface Mount

$ 1.81

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Distributor		SKU		Min	Pkg
Avnet		IPB330P10NMATMA1	1,000	1K					1.444	1.391	3h
Newark		IPB330P10NMATMA1	825	1	Cut Tape	5.190	3.450	2.460	2.180	2.180
Arrow Electronics	2	IPB330P10NMATMA1	4,961	1		1.884	1.855	1.798	1.712	1.684
Rochester Electronics		IPB330P10NMATMA1	2,440					1.850	1.660	1.560	1h
DigiKey	3	448-IPB330P10NMATMA1CT-ND	1,779	1	Cut Tape	5.390	3.582	2.554	2.266	2.266

Inventory History

3 month trend: +0.49%

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Inventory History

3 month trend:

+0.49%

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-09-08

Lifecycle StatusProduction (Last Updated: 2 months ago)

Descriptions

Descriptions of Infineon IPB330P10NMATMA1 provided by its distributors.

Power MOSFET, P Channel, 100 V, 62 A, 0.0268 ohm, TO-263 (D2PAK), Surface Mount

Avnet

Mosfet, P-Ch, 100V, To-263-3 Rohs Compliant: Yes |Infineon Technologies IPB330P10NMATMA1

Newark

Power Field-Effect Transistor, 62A I(D), 100V, 0.033ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

OptiMOS™P-Channel MOSFETs 100V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.

Infineon