Infineon IPB073N15N5ATMA1

Name: Infineon IPB073N15N5ATMA1
Brand: Infineon
SKU: IPB073N15N5ATMA1

Mosfet, N-Ch, 150V, 114A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB073N15N5ATMA1

$ 1.44

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Distributor		SKU		Min	Pkg
Avnet	2	43AC3264	135	1		4.300	2.900	2.090	1.920	1.920	1d
Newark	2	IPB073N15N5ATMA1	135	1	Cut Tape	1.970	1.970	1.970	1.970	1.970
Arrow Electronics	3	IPB073N15N5ATMA1	280	1		2.405	2.405	2.405	2.405	2.405
Future Electronics	2	IPB073N15N5ATMA1	1,000	1K	Tape & Reel				1.440	1.410
Rochester Electronics		IPB073N15N5ATMA1	152					1.510	1.350	1.270	1h

Inventory History

3 month trend: -29.64%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet11 pages0 years ago

TME

Inventory History

3 month trend:

-29.64%

CAD Models

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Supply Chain

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-03-17

Lifecycle StatusProduction (Last Updated: 1 month ago)

Descriptions

Descriptions of Infineon IPB073N15N5ATMA1 provided by its distributors.

Mosfet, N-Ch, 150V, 114A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB073N15N5ATMA1

Newark

Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 114A I(D), 150V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N-CH, 150V, 114A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8

element14 APAC

OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.

Infineon