Infineon IPB029N06N3GE8187ATMA1

N-Channel 60 V 120 A 188 W 3.2 mOhm Surface Mount Mosfet - PG-TO-263-3-2
$ 1.313
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Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB029N06N3GE8187ATMA1.

Farnell

Datasheet11 pages15 years ago

Inventory History

3 month trend:
-14.29%

Supply Chain

Country of OriginMalaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-02-17
Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPB029N06N3GE8187ATMA1 provided by its distributors.

N-Channel 60 V 120 A 188 W 3.2 mOhm Surface Mount Mosfet - PG-TO-263-3-2
Mosfet, N-Ch, 60V, 120A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB029N06N3GE8187ATMA1
Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPB029N06N3 G E8187