Infineon IMW65R107M1HXKSA1

Name: Infineon IMW65R107M1HXKSA1
Brand: Infineon
SKU: IMW65R107M1HXKSA1

Transistor Silicon Carbide MOSFET N-CH 650V 20A 3-Pin TO-247 Tube

$ 2.865

NRND

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Distributor	SKU		Min	Pkg
Newark	IMW65R107M1HXKSA1	203	1		7.630	6.730	4.650	4.350	4.350
Arrow Electronics	IMW65R107M1HXKSA1	169	1		4.780	4.780	4.780	4.780	4.780
Rutronik	TMOS3137	10,290	30				2.510	2.510	2.510	4h
Rochester Electronics	IMW65R107M1HXKSA1	249,269					2.650	2.370	2.230	21h
DigiKey	448-IMW65R107M1HXKSA1-ND	346	1	Tube	7.100	7.100	4.059	2.900	2.673

Inventory History

3 month trend: +319%

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Inventory History

3 month trend:

+319%

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Supply Chain

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2019-12-16

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

Descriptions

Descriptions of Infineon IMW65R107M1HXKSA1 provided by its distributors.

Transistor Silicon Carbide MOSFET N-CH 650V 20A 3-Pin TO-247 Tube

EBV Elektronik

Power Field-Effect Transistor, 20A I(D), 650V, 0.142ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

IHS

Sic Mosfet, N-Ch, 650V, 20A, To-247-3; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; No. Of Pins:3Pins; Rds(On) Test Voltage:18V; Power Dissipation:75W Rohs Compliant: Yes |Infineon Technologies IMW65R107M1HXKSA1

Newark

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R107M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.

Infineon