Infineon IMW65R083M1HXKSA1

Name: Infineon IMW65R083M1HXKSA1
Brand: Infineon
SKU: IMW65R083M1HXKSA1

Transistor Silicon Carbide MOSFET N-CH 650V 24A 3-Pin TO-247 Tube

$ 3.212

NRND

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Distributor		SKU		Min	Pkg
Avnet		IMW65R083M1HXKSA1	1,671	1		2.813	2.710	2.670	2.670	2.670	4d
Newark		IMW65R083M1HXKSA1	82	1		8.630	5.650	5.280	5.040	5.040
Arrow Electronics	2	IMW65R083M1HXKSA1	397	1		5.073	5.073	4.194	3.564	3.564
Future Electronics	2	IMW65R083M1HXKSA1	240	30	Tube			3.240	3.120	3.070
Rochester Electronics		IMW65R083M1HXKSA1	119					3.000	2.690	2.530	23h

Inventory History

3 month trend: +28.97%

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Inventory History

3 month trend:

+28.97%

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Supply Chain

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-03-26

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

Descriptions

Descriptions of Infineon IMW65R083M1HXKSA1 provided by its distributors.

Transistor Silicon Carbide MOSFET N-CH 650V 24A 3-Pin TO-247 Tube

EBV Elektronik

Power Field-Effect Transistor, 24A I(D), 650V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

IHS

Sic Mosfet, N-Ch, 650V, 24A, To-247-3; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; No. Of Pins:3Pins; Rds(On) Test Voltage:18V; Power Dissipation:104W Rohs Compliant: Yes |Infineon Technologies IMW65R083M1HXKSA1

Newark

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R083M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.

Infineon