Infineon IMW65R057M1HXKSA1

Name: Infineon IMW65R057M1HXKSA1
Brand: Infineon
SKU: IMW65R057M1HXKSA1

Transistor Silicon Carbide MOSFET N-CH 650V 35A 3-Pin TO-247 Tube

$ 3.84

NRND

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Distributor		SKU		Min	Pkg
Avnet		IMW65R057M1HXKSA1	1,410	1		3.465	3.338	3.289	3.289	3.289	23h
Newark		IMW65R057M1HXKSA1	81	1		9.600	6.920	6.200	6.200	6.200
Future Electronics	2	IMW65R057M1HXKSA1	240	30	Tube			3.990	3.840	3.770
Arrow Electronics	2	IMW65R057M1HXKSA1	472	1		6.206	6.206	6.206	6.206	6.206
Rochester Electronics		IMW65R057M1HXKSA1	705					3.710	3.320	3.120	21h

Inventory History

3 month trend: -22.82%

CAD Models

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Datasheets & Documents

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IHS

Datasheet15 pages0 years ago

Inventory History

3 month trend:

-22.82%

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Supply Chain

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-03-26

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

Descriptions

Descriptions of Infineon IMW65R057M1HXKSA1 provided by its distributors.

Transistor Silicon Carbide MOSFET N-CH 650V 35A 3-Pin TO-247 Tube

EBV Elektronik

Power Field-Effect Transistor, 35A I(D), 650V, 0.074ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

IHS

Sic Mosfet, N-Ch, 650V, 35A, To-247-3; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:650V; No. Of Pins:3Pins; Rds(On) Test Voltage:18V; Power Dissipation:133W Rohs Compliant: Yes |Infineon Technologies IMW65R057M1HXKSA1

Newark

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R057M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.

Infineon