Infineon IMW65R039M1HXKSA1

Name: Infineon IMW65R039M1HXKSA1
Brand: Infineon
SKU: IMW65R039M1HXKSA1

Silicon Carbide MOSFET, Single, N Channel, 46 A, 650 V, 0.039 ohm, TO-247

$ 4.917

NRND

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Distributor		SKU		Min	Pkg
Avnet		IMW65R039M1HXKSA1	818	240					4.917	4.709	4d
Newark		IMW65R039M1HXKSA1	40	1		12.000	8.300	7.630	7.630	7.630
Rochester Electronics		IMW65R039M1HXKSA1	12					4.710	4.220	3.970	22h
Future Electronics	2	IMW65R039M1HXKSA1	0	30	Tube			5.130	5.010	4.930
Arrow Electronics		IMW65R039M1HXKSA1	0	240					4.709	4.709

Inventory History

3 month trend: +39.12%

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Datasheets & Documents

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IHS

Datasheet15 pages0 years ago

Inventory History

3 month trend:

+39.12%

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Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-03-26

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

Descriptions

Descriptions of Infineon IMW65R039M1HXKSA1 provided by its distributors.

Silicon Carbide MOSFET, Single, N Channel, 46 A, 650 V, 0.039 ohm, TO-247

EBV Elektronik

Power Field-Effect Transistor, 46A I(D), 650V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

IHS

Sic Mosfet, N-Ch, 650V, 46A, To-247-3; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:650V; No. Of Pins:3Pins; Rds(On) Test Voltage:18V; Power Dissipation:176W Rohs Compliant: Yes |Infineon Technologies IMW65R039M1HXKSA1

Newark

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R039M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.

Infineon