Infineon IMBG65R072M1HXTMA1

Name: Infineon IMBG65R072M1HXTMA1
Brand: Infineon
SKU: IMBG65R072M1HXTMA1

Silicon Carbide MOSFET, Single, N Channel, 33 A, 650 V, 0.072 ohm, TO-263

$ 3.589

NRND

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Distributor		SKU		Min	Pkg
Arrow Electronics		IMBG65R072M1HXTMA1	953	1		6.439	5.114	3.845	3.654	3.654
Rochester Electronics		IMBG65R072M1HXTMA1	2,677					3.140	2.810	2.640	12h
DigiKey	2	448-IMBG65R072M1HXTMA1CT-ND	959	1	Cut Tape	8.010	5.429	3.967	3.844	3.844
Newark		IMBG65R072M1HXTMA1	0	1	Cut Tape	7.260	5.810	4.700	3.700	3.700
Avnet		IMBG65R072M1HXTMA1	0	1K					3.589	3.221	4d

Inventory History

3 month trend: -40.39%

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Inventory History

3 month trend:

-40.39%

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Supply Chain

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2022-01-11

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

Descriptions

Descriptions of Infineon IMBG65R072M1HXTMA1 provided by its distributors.

Silicon Carbide MOSFET, Single, N Channel, 33 A, 650 V, 0.072 ohm, TO-263

EBV Elektronik

Power Field-Effect Transistor, 33A I(D), 650V, 0.094ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263

IHS

Sic Mosfet, N-Ch, 650V, 33A, To-263-7; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; No. Of Pins:7Pins; Rds(On) Test Voltage:18V; Power Dissipation:140W Rohs Compliant: Yes |Infineon Technologies IMBG65R072M1HXTMA1

Newark

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R072M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in mid power applications. It is optimized to enable max system performance, compactness and reliability.

Infineon