Infineon IMBG120R140M1HXTMA1

Name: Infineon IMBG120R140M1HXTMA1
Brand: Infineon
SKU: IMBG120R140M1HXTMA1

Transistor Silicon Carbide MOSFET N-CH 1200V 18A 7-Pin TO-263 T/R

$ 3.06

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Distributor		SKU		Min	Pkg
Avnet	2	92AH5311	12	1		7.020	4.750	3.500	3.350	3.350	16h
Newark		IMBG120R140M1HXTMA1	12	1	Cut Tape	4.930	4.860	3.640	3.400	3.400
Arrow Electronics	2	IMBG120R140M1HXTMA1	990	1		4.783	4.783	4.783	4.783	4.783
Rochester Electronics		IMBG120R140M1HXTMA1	9,210					2.880	2.580	2.420	14h
DigiKey	2	448-IMBG120R140M1HXTMA1CT-ND	480	1	Cut Tape	7.440	5.023	3.655	3.526	3.526

Inventory History

3 month trend: -16.36%

CAD Models

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Datasheets & Documents

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Inventory History

3 month trend:

-16.36%

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Supply Chain

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2020-09-17

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

Descriptions

Descriptions of Infineon IMBG120R140M1HXTMA1 provided by its distributors.

Transistor Silicon Carbide MOSFET N-CH 1200V 18A 7-Pin TO-263 T/R

EBV Elektronik

Power Field-Effect Transistor, 18A I(D), 1200V, 0.239ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263

IHS

Sic Mosfet, N-Ch, 1.2Kv, 18A, To-263-7; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:7Pins; Rds(On) Test Voltage:18V; Power Dissipation:107W Rohs Compliant: Yes |Infineon Technologies IMBG120R140M1HXTMA1

Newark

The CoolSiC™ 1200 V, 140 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Infineon