Infineon IKZA50N65RH5XKSA1

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

IGBT, 650 V, 80 A, 305W, To-247, 1.65 Vsat

晶体管, IGBT, 650V, 80A, 305W, TO-247;

IGBT TRENCH FS 650V 80A TO247-4

IKZA50N65RH5 - 650 V, 50 A IGBT

IGBT 650V 50A+SIC-DIOD TO-247-4

Igbt, Single, 650V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:305W; Collector Emitter Voltage Max:650V; No. Of Pins:4Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKZA50N65RH5XKSA1

650 V, 50 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package.The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching speed above 30 kHz.Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete enables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.