Infineon IHW25N120E1XKSA1

Name: Infineon IHW25N120E1XKSA1
Brand: Infineon
SKU: IHW25N120E1XKSA1

IGBT NPT/TRENCH 1200V 50A TO247 / IGBT NPT and Trench 1200 V 50 A 231 W Through Hole PG-TO247-3

$ 1.446

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet	2	34AC1619	7	1		4.000	4.000	4.000	4.000	4.000	2d
Newark		IHW25N120E1XKSA1	7	1		0.576	0.576	0.576	0.576	0.576
Arrow Electronics		IHW25N120E1XKSA1	20	1		1.419	1.419	1.419	1.419	1.419
DigiKey		IHW25N120E1XKSA1-ND	1	240	Tube				1.473	1.473
Farnell		IHW25N120E1XKSA1	0	1		3.671*	2.393*	1.998*	1.482*	1.482*	22h

Inventory History

3 month trend: -43.49%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IHW25N120E1XKSA1.

IHS

Datasheet14 pages0 years ago

TME

Inventory History

3 month trend:

-43.49%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-08-19

Lifecycle StatusObsolete (Last Updated: 3 months ago)

LTB Date2025-12-31

LTD Date2026-06-30

Descriptions

Descriptions of Infineon IHW25N120E1XKSA1 provided by its distributors.

IGBT NPT/TRENCH 1200V 50A TO247 / IGBT NPT and Trench 1200 V 50 A 231 W Through Hole PG-TO247-3

Win Source

1200 V, 25 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Infineon SCT

IGBT, SINGLE, 1.2KV, 50A, TO-247; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:231W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pin

element14 APAC

Igbt, 1.2Kv, 50A, 150Deg C, 231W; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:1.5V; Power Dissipation:231W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Infineon Technologies IHW25N120E1XKSA1

Newark

The Reverse Conducting E1 1200 V, 25 A RC-E IGBTs with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. Low switching and conducting losses, similar to our RC-H3 family. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineon’s proven quality in Reverse Conducting IGBTs and meets all the needs of soft switching applications, including attractive pricing compared to other general purpose IGBTs.

Infineon